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| JMnic Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION With TO-3PFa package Complement to type 2SD1712 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -5 -8 60 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-3A ;IB=-0.3A IC=-3A ; VCE=-5V VCB=-100V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 60 20 130 20 MIN TYP. 2SB1157 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT MAX -2.0 -1.8 -50 -50 UNIT V V |I |I A A 200 pF MHz hFE-2 classifications Q 60-120 S 80-160 P 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1157 Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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